Title Electrical properties of bismuth selenide (Bi2Se3) thin films prepared by reactive evaporation
Author: Jacob John, K.; Pradeep, B. & Mathai, Elizabeth
Solid State Communications, March 1993
1993
http://linkinghub.elsevier.com/retrieve/pii/003810989390196T
More details: Polycrystalline stoichiometric Bi2Se3 thin films have been prepared by reactive evaporation method. These films are n-type. Hall effect measurements show that the films have a carrier concentration of 1.02 ?� 1019 cm-3 at room temperature.reactive evaporation,semiconductor,thin films
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