Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

Title Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption
Author: Sharma, R K; Rastogi, A C; Kohli, Sandeep; Kang, Tae Won & Singh, Gurmeet
Physica B: Condensed Matter, 2004
2004
http://www.sciencedirect.com/science/article/pii/S0921452604006751
More details: Manganese indium sulphide (MnInxS4) thin films within x range 2.0???x???1.0 were deposited by a simple chemical spray pyrolysis using an aqueous solution of MnCl2, InCl3 and (NH2)2CS in 1:2:4 molar ratio. X-ray diffraction on these films revealed the formation of cubic MnIn2S4 along with the secondary phases MnS2, In2S3, and InS. It has been observed that the concentration of InCl3 in solution affects the manganese indium sulphide film properties causing [Mn] deficiency on its reduction in the spray solution. As evidenced by X-ray diffraction studies InCl3, concentration in the spray solution affects the occurrence of free secondary phases of manganese sulphide and indium sulphide, leading to a wide variation in optical properties of the films. A variation in optical energy gap from 3.1 to 1.9\&\#xa0;eV for as-deposited MnInxS4 films has been observed within 2.0???x???1.0 spray solution composition. A further reduction in the optical band gap up to 0.80\&\#xa0;eV has been observed at post-deposition annealing under \{N2\} and \{H2S\} ambient atmosphere. MnIn2S4,Spray deposition,Ternary semiconductor

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