Optical and photoelectrical properties of $\beta$-In2S3 thin films prepared by two-stage process

Title Optical and photoelectrical properties of $\beta$-In2S3 thin films prepared by two-stage process
Author: Yoosuf, Rahana & Jayaraj, M K
Solar Energy Materials and Solar Cells, 2005
2005
http://www.sciencedirect.com/science/article/pii/S0927024805000176
More details: $\beta$-In2S3 films were grown on glass as well as on quartz substrates by rapid heating of metallic indium films in \{H2S\} atmosphere. The effect of sulfurization temperature and time on the growth, structural, electrical and photoelectrical properties of $\beta$-In2S3 films has been investigated. Highly oriented single-phase $\beta$-In2S3 films were grown by the sulfurization technique. The morphology and composition of films have been characterized. The optical band gap of $\beta$-In2S3 is found to vary from 1.9 to 2.5\&\#xa0;eV when the sulfurization temperature is varied from 300 to 600\&\#xa0;??C or by increasing the sulfurization time. The electrical properties of the thin films have also been studied; they have n-type electrical conductivity. The photoelectrical properties of the $\beta$-In2S3 films are also found to depend on the sulfurizing temperature. A high photoresponse is obtained for films prepared at a sulfurizing temperature of 600\&\#xa0;??C. $\beta$-In2S3 can be used as an alternative to toxic CdS as a window layer in photovoltaic technology. Buffer layer,Chalcogenization,Solar cells,Sulfurization,Thermal evaporation,$\beta$-In2S3