High yield???low temperature growth of indium sulphide nanowires via chemical vapor deposition

Title High yield?��low temperature growth of indium sulphide nanowires via chemical vapor deposition
Author: Zervos, Matthew; Papageorgiou, Pola & Othonos, Andreas
Journal of Crystal Growth, 2010
2010
http://www.sciencedirect.com/science/article/pii/S0022024809011063
More details: Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with \{H2S\} using chemical vapor deposition at temperatures as low as 250\&\#xa0;??C. We find that the growth of InxSy \{NWs\} via the direct reaction of In with \{H2S\} is hindered by the formation of InxSy around the source of In which limits its vapor pressure. Thus a low yield of InxSy \{NWs\} with diameters of ?��100\&\#xa0;nm, lengths up to ?��5\&\#xa0;$\mu$m and hexagonal crystals measuring ?��500\&\#xa0;nm across, were obtained between 500 and 600\&\#xa0;??C, but their growth was not uniform or reproducible. These exhibited weak, but nevertheless clear peaks, in the X-ray diffraction (XRD) spectrum corresponding to tetragonal $\beta$-In2S3 and orthorhombic InS. No \{NWs\} were obtained for TG?��500\&\#xa0;??C while for TG\>600\&\#xa0;??C we obtained a polycrystalline layer with oriented grains of triangular shape. In contrast, a high yield of InS \{NWs\} with diameters ?��200\&\#xa0;nm and lengths up to ?��2\&\#xa0;$\mu$m were obtained at temperatures as low as 250\&\#xa0;??C via the reaction of In and InCl3 with H2S. The sublimation of InCl3 enhances the vapor pressure of In and the growth of InS NWs, which organize themselves in urchin like structures at 300\&\#xa0;??C, exhibiting very intense peaks in the \{XRD\} spectrum, corresponding mainly to orthorhombic InS. Optical transmission measurements through the InS \{NWs\} gave a band-gap of 2.4\&\#xa0;eV. A1. Nanostructures,A3. Chemical vapor deposition processes,B1. Nanomaterials,B1. Sulfides,B2. Semiconducting materials