A review of III???V semiconductor based metal-insulator-semiconductor structures and devices

Title A review of III?��V semiconductor based metal-insulator-semiconductor structures and devices
Author: Mui, D S L; Wang, Z & Morko\c{c}, H
Thin Solid Films, 1993
More details: Recent breakthroughs in the deposition of multilayer semiconductor/dielectric systems have potentially paved the way for metal-insulator-semiconductor (MIS) structures with excellent interface properties to be achieved. In this paper, we review the recent progress in III?��V \{MIS\} structures and divices. The semiconductors of interest are In0.53Ga0.47As, InP, and GaAs with their excellent electrical properties. These III?��V semiconductor based \{MIS\} structures have shown steady progress over the past few years, taking advantage of the in situ deposited heteromorphic insulators that led to insulator/III?��V compound semiconductor (ICS) interfaces with low interface trap density. Though preliminary in nature, with Si3N4 gate dielectric, minimum interface state densities in the region of low 1010 eV?��1 cm?��2 have been obtained in GaAs albeit with some frequwncy shift and a deep interface trap. The structures in InGaAs have so far shown minimum interface state densities in the low 1011 eV?��1 cm?��2 region and very little frequency dispersion. They are void of mid-gap interface traps, and given the recent ongoing developments, it is extremely likely that interface state densities similar to those in GaAs should be possible shortly. Metal-insulator-semiconductor field effect transistors with transconductances of over 200 mS mm?��1 have already been fabricated in InGaAs channels. In situ insulator deposition has been demonstrated to be very effective in avoiding interfacial contamination, for example, oxygen, water vapor, and carbon, a scheme deemed extremely pivotal in the eventual realization of high quality \{ICS\} interfaces. Apart from technological difficulties in realizing III?��V semiconductor \{MIS\} devices, interpretation of the electrical properties of \{ICS\} interfaces is still not well understood. Also discussed in this paper are the issues involved in characterizing \{ICS\} interfaces.

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