Preparation and characterization of CuInS2 thin films from aqueous solutions by novel photochemical deposition technique

Title Preparation and characterization of CuInS2 thin films from aqueous solutions by novel photochemical deposition technique
Author: Podder, Jiban; Miyawaki, Tetsuya & Ichimura, Masaya
Journal of Crystal Growth, 2005
2005
http://www.sciencedirect.com/science/article/pii/S0022024804015891
More details: CuInS2 (CIS) thin films were deposited on \{ITO\} glass substrate by a two-step process using a simple and low-cost photochemical deposition technique. In the first step InS thin films were deposited from aqueous solution of In2(SO4)3 and Na2S2O3 and in the second step CuxS films were deposited on the InS films from CuSO4 and Na2S2O3. The as-deposited films were annealed at 300\&\#xa0;??C for 30\&\#xa0;min. Annealed samples were characterized using Raman spectroscopy, Auger electron spectroscopy, scanning electron micrograph and optical transmission study, etc. It was observed that ternary layers were formed by interdiffusion of Cu and In during the annealing and that composition of the annealed films was determined by the deposition time of the binary layers. By optimizing the condition, nearly stoichiometric \{CIS\} was obtained. A1.Raman scattering,A3.Photochemical deposition,A3.Thin film,B1.Copper indium disulphide

Proceedings of the 14th International Conference on Crystal Growth and the 12th International Conference on Vapor Growth and Epitaxy

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