Core-level photoemission study of the deposition of thin manganese layers on sulphur-terminated InP(100) surfaces

Title Core-level photoemission study of the deposition of thin manganese layers on sulphur-terminated InP(100) surfaces
Author: Hughes, G J; Ryan, P; Quinn, P & Cafolla, A A
Surface Science, 1999
1999
http://www.sciencedirect.com/science/article/pii/S0039602899005002
More details: The deposition of thin layers of manganese on sulphur-terminated InP(100) surfaces has been investigated by soft X-ray core-level photoemission. The sulphur treatment was carried out in situ using an ultra-high-vacuum-compatible electrochemical source. Thin manganese layers were deposited onto the sulphur-induced (2?�1) surface reconstruction of both n- and p-type InP(100) at room temperature. The Fermi-level position for both doping types following sulphur deposition and anneal was found to lie in the range 1.05?��1.15\&\#xa0;eV above the valence band maximum. There is evidence of a strong chemical interaction between manganese and the sulphur-terminated surface, which removes the (2?�1) surface reconstruction and moves the Fermi level back towards a mid-gap position for both doping types. Chemically shifted components of the In\&\#xa0;4d and P\&\#xa0;2p core levels diffuse out through the growing metal overlayer, and the sulphur segregates to the top. Subsequent annealing cycles resulted in extensive chemical intermixing and a significant broadening of the interfacial region. Core-level photoemission,InP(100),Surface passivation,Thin magnetic layers